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- Subject
- Analog Electronicselectrical-engineering-mcqs › analog-electronics
- Published
- 19 Dec 2018
- Last updated
- 28 May 2026
Explanation
In a reverse-biased p-n junction diode, the electric field reaches its peak strength precisely at the p-n junction interface, due to the maximum potential difference occurring there. The field decreases gradually towards the edges of the depletion region on both the p and n sides.
More Analog Electronics MCQs
Practice related questions from the same subject.
- 1.In a common base amplifier configuration, how does the AC collector voltage relate to the AC base voltage?
- 2.Why is it important to encapsulate a transistor?
- 3.A cascade amplifier is formed by connecting which combination of amplifier stages?
- 4.Three identical amplifiers, each with a voltage gain of 50, an input resistance of 1 kΩ, and an output resistance of 250 Ω, are connected in series. What is the overall open-circuit voltage gain (in dB) of the combined amplifier?
- 5.An operational amplifier with a slew rate of 1 V/µs is configured to provide a gain of 40 dB. To ensure distortion-free amplification of sinusoidal signals from DC up to 20 kHz, what is the maximum allowable input voltage amplitude?
- 6.Given an npn BJT with transconductance gm = 38 mA/V, capacitances cμ = 10⁻¹⁴ F and cπ = 10⁻¹³ F, and a DC current gain β₀ = 90, what are the values of the cutoff frequency fT and the transition frequency fβ?
- 7.When a MOSFET switch is turned on, it can be modeled as which of the following components?
- 8.Given a transistor with a current gain (β) of 0.98, a collector leakage current (Ico) of 6µA, and a base current (Iβ) of 100µA, what is the collector current (Ic)?
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